US 11,908,884 B2
Inductive device
Wei-Yu Chou, Taichung (TW); Yang-Che Chen, Hsin-Chu (TW); Chen-Hua Lin, Douliu (TW); Victor Chiang Liang, Hsinchu (TW); Huang-Wen Tseng, Zhubei (TW); and Chwen-Ming Liu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 7, 2022, as Appl. No. 17/658,266.
Application 17/658,266 is a continuation of application No. 16/947,359, filed on Jul. 29, 2020, granted, now 11,322,576.
Prior Publication US 2022/0231116 A1, Jul. 21, 2022
Int. Cl. H01F 41/34 (2006.01); H01L 23/522 (2006.01); H01L 27/08 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/10 (2013.01) [H01F 41/34 (2013.01); H01L 23/5227 (2013.01); H01L 27/08 (2013.01)] 13 Claims
OG exemplary drawing
 
1. An inductive device, comprising:
a lower magnetic layer;
an upper magnetic layer in contact with the lower magnetic layer, wherein the upper magnetic layer comprises one or more openings to provide one or more magnetic leakage paths for the inductive device; and
one or more insulating layers insulating one or more conductors from the lower magnetic layer and the upper magnetic layer.