US 11,908,878 B2
Image sensor and manufacturing method thereof
Min-Feng Kao, Chiayi (TW); Dun-Nian Yaung, Taipei (TW); Jen-Cheng Liu, Hsin-Chu (TW); Wen-Chang Kuo, Tainan (TW); Sheng-Chau Chen, Tainan (TW); Feng-Chi Hung, Chu-Bei (TW); and Sheng-Chan Li, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on May 24, 2021, as Appl. No. 17/327,996.
Claims priority of provisional application 63/137,871, filed on Jan. 15, 2021.
Prior Publication US 2022/0231058 A1, Jul. 21, 2022
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/1464 (2013.01); H01L 27/14623 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a substrate, having an active region and a peripheral region next to the active region;
a pixel arranged in the active region and comprising a photosensitive region and a circuitry region next to the photosensitive region;
an isolation structure disposed in the substrate at a first side of the substrate surrounding the photosensitive region, wherein the isolation structure comprises a conductive grid and a dielectric structure covering a sidewall of the conductive grid;
a conductive structure disposed in the substrate within the peripheral region, wherein the conductive grid is electrically connected to the conductive structure; and
an isolation disposed in the substrate under the conductive structure at a second side opposite to the first side of the substrate,
wherein the conductive structure is in contact with the isolation and electrically connecting the conductive grid and a conductive component at the first side of the substrate through the isolations.