CPC H01L 27/0924 (2013.01) [H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/26533 (2013.01); H01L 21/26586 (2013.01); H01L 27/0886 (2013.01); H01L 27/0921 (2013.01); H01L 27/0928 (2013.01); H10B 10/12 (2023.02)] | 20 Claims |
1. A semiconductor device comprising:
a semiconductor substrate;
a first fin structure protruding from the semiconductor substrate;
a second fin structure protruding from the semiconductor substrate; and
a carbon barrier region disposed at a region of the semiconductor substrate between the first fin structure and the second fin structure
wherein the carbon barrier region extends to a bottom of each of the first and second fin structures.
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