CPC H01L 27/0921 (2013.01) [H01L 21/823871 (2013.01); H01L 27/0262 (2013.01); H01L 29/0649 (2013.01); H01L 29/1083 (2013.01); H01L 29/87 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a first region;
a first gate;
a second region disposed opposite to the first region with respect to the first gate;
a first metal contact coupling the first region to the second region;
a third region;
a fourth region disposed opposite to the third region with respect to the first gate;
a second metal contact coupling the third region to the fourth region;
a fifth region disposed between the first gate and the second region, and disconnected from the first metal contact and the second metal contact; and
a sixth region disposed between the first gate and the first region, and disconnected from the first metal contact and the second metal contact.
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