US 11,908,853 B2
Integrated circuit and method of generating integrated circuit layout
Fong-Yuan Chang, Hsinchu County (TW); Kuo-Nan Yang, Hsinchu (TW); Chung-Hsing Wang, Hsinchu County (TW); Lee-Chung Lu, Taipei (TW); Sheng-Fong Chen, Hsinchu County (TW); Po-Hsiang Huang, Tainan (TW); Hiranmay Biswas, Kolkata (IN); Sheng-Hsiung Chen, Hsinchu County (TW); and Aftab Alam Khan, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Dec. 21, 2022, as Appl. No. 18/069,887.
Application 18/069,887 is a continuation of application No. 17/214,703, filed on Mar. 26, 2021, granted, now 11,552,068.
Application 17/214,703 is a continuation of application No. 16/724,001, filed on Dec. 20, 2019, granted, now 10,964,685, issued on Mar. 30, 2021.
Application 16/724,001 is a continuation of application No. 16/122,762, filed on Sep. 5, 2018, granted, now 10,515,944, issued on Dec. 24, 2019.
Claims priority of provisional application 62/585,917, filed on Nov. 14, 2017.
Prior Publication US 2023/0121153 A1, Apr. 20, 2023
Int. Cl. H01L 27/02 (2006.01); H01L 23/522 (2006.01); H01L 27/118 (2006.01); G06F 30/394 (2020.01)
CPC H01L 27/0207 (2013.01) [G06F 30/394 (2020.01); H01L 23/5226 (2013.01); H01L 27/11807 (2013.01); H01L 2027/11881 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit, comprising:
a cell layer including a first cell and a second cell;
a first metal layer over the cell layer and having a first conductive feature, wherein the first conductive feature spans over a boundary between the first and second cells, and has a lengthwise direction along a first direction, and wherein the first metal layer further comprises a third conductive feature, the third conductive feature being misaligned with the first conductive feature along the first direction;
a second metal layer over the first metal layer and having a second conductive feature, wherein the second conductive feature spans over the boundary between the first and second cells, and has a lengthwise direction along a second direction that is perpendicular to the first direction, and wherein a shortest distance between a center line of the first conductive feature and a center line of the third conductive feature along the second direction is less than a width of the first conductive feature; and
a first via between the first metal layer and the second metal layer and connecting the first conductive feature to the second conductive feature.