US 11,908,851 B2
Semiconductor device having fin structure
Shun-Li Chen, Tainan (TW); Chung-Te Lin, Tainan (TW); Hui-Zhong Zhuang, Kaohsiung (TW); Pin-Dai Sue, Tainan (TW); and Jung-Chan Yang, Taoyuan County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Dec. 9, 2020, as Appl. No. 17/116,915.
Application 17/116,915 is a division of application No. 16/181,727, filed on Nov. 6, 2018, granted, now 10,867,986.
Claims priority of provisional application 62/590,469, filed on Nov. 24, 2017.
Prior Publication US 2021/0091066 A1, Mar. 25, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01); H01L 21/8238 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01)
CPC H01L 27/0207 (2013.01) [H01L 21/28525 (2013.01); H01L 21/28568 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 23/5221 (2013.01); H01L 23/5286 (2013.01); H01L 23/53209 (2013.01); H01L 23/53271 (2013.01); H01L 27/0924 (2013.01); H01L 29/41791 (2013.01); H01L 29/4238 (2013.01); H01L 29/42372 (2013.01); H01L 29/42376 (2013.01); H01L 29/66795 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device, comprising:
forming a fin structure protruding from a substrate of the semiconductor device;
forming a first conductive rail on the substrate, wherein a side of the first conductive rail facing the fin structure has a first recess and a second recess;
forming a first conductive line in a same layer as the first conductive rail by filling a first conductive material into the first recess, wherein the first conductive line extends across the fin structure and wraps a portion of the fin structure; and
forming a second conductive line in the same layer as the first conductive rail by filling a second conductive material into the second recess, wherein the second conductive line extends across the fin structure and contacts another portion of the fin structure.