US 11,908,839 B2
3D semiconductor device, structure and methods with connectivity structures
Zvi Or-Bach, Haifa (IL); Jin-Woo Han, San Jose, CA (US); Brian Cronquist, Klamath Falls, OR (US); and Eli Lusky, Ramat-Gan (IL)
Assigned to Monolithic 3D Inc., Klamath Falls, OR (US)
Filed by Monolithic 3D Inc., Klamath Falls, OR (US)
Filed on Sep. 19, 2022, as Appl. No. 17/947,752.
Application 17/947,752 is a continuation in part of application No. 16/649,660, granted, now 11,502,095, previously published as PCT/US2018/052332, filed on Sep. 23, 2018.
Claims priority of provisional application 62/733,005, filed on Sep. 18, 2018.
Claims priority of provisional application 62/726,969, filed on Sep. 4, 2018.
Claims priority of provisional application 62/713,345, filed on Aug. 1, 2018.
Claims priority of provisional application 62/696,803, filed on Jul. 11, 2018.
Claims priority of provisional application 62/689,058, filed on Jun. 23, 2018.
Claims priority of provisional application 62/681,249, filed on Jun. 6, 2018.
Claims priority of provisional application 62/651,722, filed on Apr. 3, 2018.
Claims priority of provisional application 62/645,794, filed on Mar. 20, 2018.
Claims priority of provisional application 62/562,457, filed on Sep. 24, 2017.
Prior Publication US 2023/0041344 A1, Feb. 9, 2023
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 25/18 (2023.01)
CPC H01L 25/0657 (2013.01) [H01L 24/08 (2013.01); H01L 25/18 (2013.01); H01L 2224/08145 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06565 (2013.01); H01L 2225/06589 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A 3D device, the device comprising:
at least a first level comprising logic circuits;
at least a second level bonded to said first level,
wherein said second level comprises a plurality of transistors,
wherein said device comprises connectivity structures,
wherein said connectivity structures comprise at least one of the following:
a. differential signaling, or
b. radio frequency transmission lines, or
c. Surface Waves Interconnect (SWI) lines, and
wherein said bonded comprises oxide to oxide bond regions and metal to metal bond regions; and
a plurality of vias disposed through said second level,
wherein said plurality of vias have a circumscribed diameter of less than 2 micrometers.