US 11,908,817 B2
Bonding structure of dies with dangling bonds
Hsien-Wei Chen, Hsinchu (TW); Ming-Fa Chen, Taichung (TW); and Chih-Chia Hu, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 7, 2020, as Appl. No. 17/113,357.
Application 17/113,357 is a division of application No. 16/371,863, filed on Apr. 1, 2019, granted, now 10,861,808.
Claims priority of provisional application 62/770,396, filed on Nov. 21, 2018.
Prior Publication US 2021/0118832 A1, Apr. 22, 2021
Int. Cl. H01L 23/00 (2006.01); H01L 23/498 (2006.01); H03K 19/1776 (2020.01); H01L 23/495 (2006.01)
CPC H01L 24/06 (2013.01) [H01L 23/49503 (2013.01); H01L 23/49827 (2013.01); H03K 19/1776 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package comprising:
a first die comprising:
a first semiconductor substrate;
a first through-via penetrating through the first semiconductor substrate; and
a first dielectric layer over and contacting the first semiconductor substrate;
a second dielectric layer over the first die;
a first active bond pad in the second dielectric layer, the first active bond pad is over and electrically coupling to the first through-via;
a first dummy bond pad in the second dielectric layer; and
a second die comprising:
a second active bond pad over and bonded to the first active bond pad; and
a dangling bond pad over and bonded to the first dummy bond pad.