US 11,908,792 B2
Semiconductor device comprising cap layer over dielectric layer and method of manufacture
Shao-Kuan Lee, Kaohsiung (TW); Hai-Ching Chen, Hsinchu (TW); Hsin-Yen Huang, New Taipei (TW); Shau-Lin Shue, Hsinchu (TW); and Cheng-Chin Lee, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed on Nov. 29, 2021, as Appl. No. 17/536,324.
Application 17/536,324 is a continuation of application No. 16/552,937, filed on Aug. 27, 2019, granted, now 11,189,560.
Prior Publication US 2022/0084941 A1, Mar. 17, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/7682 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 23/53295 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first conductive feature;
a second conductive feature;
a first dielectric layer positioned between the first conductive feature and the second conductive feature;
an etch stop layer over the first dielectric layer;
a cap layer over the first conductive feature, the second conductive feature, and the etch stop layer, wherein the cap layer is adjacent a first sidewall of the etch stop layer and in direct contact with the first conductive feature; and
a contact overlying a portion of the first dielectric layer positioned between the first conductive feature and the second conductive feature, wherein:
the contact is separated from the portion of the first dielectric layer by the etch stop layer, and
the contact is in direct contact with a top surface of the etch stop layer and electrically coupled to the second conductive feature.