US 11,908,754 B2
Method and system for controlling profile of critical dimension
Jun Shimada, Hsinchu (TW); Chen-Fon Chang, Hsinchu (TW); and Chih-Teng Liao, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Mar. 4, 2021, as Appl. No. 17/191,905.
Prior Publication US 2022/0285229 A1, Sep. 8, 2022
Int. Cl. H01L 21/68 (2006.01); H01L 21/66 (2006.01); H01L 21/687 (2006.01); H01L 21/67 (2006.01); H01L 21/3065 (2006.01)
CPC H01L 22/20 (2013.01) [H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 21/68764 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for controlling a profile of a critical dimension of a substrate, comprising:
forming a plurality of first features having a pre-process critical dimension on the substrate;
analyzing a profile of the pre-process critical dimension for the substrate; and
performing an etching process on the substrate to form a plurality of second features on the substrate, wherein the second features correspond to the first features and have a post-process critical dimension that is related to the pre-process critical dimension;
wherein the substrate is rotated during the etching process when analysis of the profile of the pre-process critical dimension reveals a first condition that the pre-process critical dimension measured at a peripheral portion of the substrate is smaller than that measured at a central portion of the substrate on average;
wherein a rotational speed at which the substrate is rotated is positively correlated to a difference between an average value of the pre-process critical dimension measured at the peripheral portion of the substrate and an average value of the pre-process critical dimension measured at the central portion of the substrate.