CPC H01L 21/823842 (2013.01) [H01L 21/02068 (2013.01); H01L 21/28088 (2013.01); H01L 21/321 (2013.01); H01L 27/0922 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01)] | 20 Claims |
1. A method of forming a semiconductor structure, comprising:
providing a substrate;
providing a first gate electrode over the substrate;
forming a first pair of spacers on two sides of the first gate electrode;
removing the first gate electrode to form a first trench between the first pair of spacers;
depositing a dielectric layer in the first trench;
depositing a first layer over the dielectric layer;
removing the first layer from the first trench; and
depositing a work function layer over the dielectric layer in the first trench.
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