CPC H01L 21/823814 (2013.01) [H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/66636 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a substrate having a first region and a second region of opposite conductivity types;
an isolation feature over the substrate;
a first fin protruding from the substrate and through the isolation feature in the first region;
a first epitaxial feature over the first fin;
a second fin protruding from the substrate and through the isolation feature in the second region; and
a second epitaxial feature over the second fin,
wherein a portion of the isolation feature located between the first fin and the second fin protrudes from a top surface of the isolation feature.
|