US 11,908,744 B2
Semiconductor device structure
Lin-Yu Huang, Hsinchu (TW); Sheng-Tsung Wang, Hsinchu (TW); Jia-Chuan You, Dayuan Township, Taoyuan County (TW); Chia-Hao Chang, Hsinchu (TW); Tien-Lu Lin, Hsinchu (TW); Yu-Ming Lin, Hsinchu (TW); and Chih-Hao Wang, Baoshan Township, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 9, 2022, as Appl. No. 17/818,443.
Application 17/120,689 is a division of application No. 16/571,684, filed on Sep. 16, 2019, granted, now 10,867,863, issued on Dec. 15, 2020.
Application 17/818,443 is a continuation of application No. 17/120,689, filed on Dec. 14, 2020, granted, now 11,508,622.
Prior Publication US 2022/0384264 A1, Dec. 1, 2022
Int. Cl. H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/311 (2006.01); H01L 29/78 (2006.01)
CPC H01L 21/823431 (2013.01) [H01L 21/02532 (2013.01); H01L 21/32134 (2013.01); H01L 21/32139 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/401 (2013.01); H01L 29/41791 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 21/02164 (2013.01); H01L 21/31116 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a substrate;
a first fin structure protruding from the substrate;
an isolation layer formed around the first fin structure and covering a sidewall of the first fin structure;
a gate stack formed over the first fin structure and the isolation layer;
a first source/drain structure formed over the first fin structure and spaced apart from the gate stack;
a contact structure formed over the first source/drain structure;
a dielectric structure formed through the contact structure; and
a cap layer formed over the contact structure,
wherein the contact structure and the dielectric structure has a first slope interface that slopes downwardly from a top surface of the contact structure to a top surface of the isolation layer, and the contact structure covers the top surface of the isolation layer, and wherein the cap layer and the dielectric structure has a second slope interface that slopes downwardly from a top surface of cap layer to the top surface of the contact structure.