CPC H01L 21/8221 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 21/84 (2013.01); H01L 27/0688 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/823814 (2013.01); H01L 21/823871 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a semiconductor substrate;
a first fin and a second fin protruding from the semiconductor substrate;
a first epitaxial material located on the first fin;
a second epitaxial material located on the second fin, each of the first and second epitaxial materials bending downward towards the semiconductor substrate in a cross-sectional plane perpendicular to a lengthwise direction of the first and second fins; and
a merged epitaxial material over and in contact with the first and second epitaxial materials.
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