US 11,908,742 B2
Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same
Yi-Jing Lee, Hsinchu (TW); Jeng-Wei Yu, Hsinchu (TW); Li-Wei Chou, Hsinchu (TW); Tsz-Mei Kwok, Hsinchu (TW); and Ming-Hua Yu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jun. 14, 2021, as Appl. No. 17/347,332.
Application 16/049,971 is a division of application No. 15/594,842, filed on May 15, 2017, granted, now 10,049,936.
Application 17/347,332 is a continuation of application No. 16/773,268, filed on Jan. 27, 2020, granted, now 11,037,826.
Application 16/773,268 is a continuation of application No. 16/049,971, filed on Jul. 31, 2018, granted, now 10,546,784.
Claims priority of provisional application 62/495,612, filed on Dec. 15, 2016.
Prior Publication US 2021/0313230 A1, Oct. 7, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 21/84 (2006.01); H01L 27/06 (2006.01)
CPC H01L 21/8221 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 21/84 (2013.01); H01L 27/0688 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/823814 (2013.01); H01L 21/823871 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate;
a first fin and a second fin protruding from the semiconductor substrate;
a first epitaxial material located on the first fin;
a second epitaxial material located on the second fin, each of the first and second epitaxial materials bending downward towards the semiconductor substrate in a cross-sectional plane perpendicular to a lengthwise direction of the first and second fins; and
a merged epitaxial material over and in contact with the first and second epitaxial materials.