US 11,908,740 B2
Semiconductor structure with doped via plug
Tung-Po Hsieh, Hsinchu (TW); Su-Hao Liu, Jhongpu Township (TW); Hong-Chih Liu, Zhubei (TW); Jing-Huei Huang, Yuanshan Township, Yilan County (TW); Jie-Huang Huang, Taoyuan (TW); Lun-Kuang Tan, Hsinshu (TW); Huicheng Chang, Tainan (TW); Liang-Yin Chen, Hsinchu (TW); and Kuo-Ju Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 25, 2022, as Appl. No. 17/994,153.
Application 17/007,661 is a division of application No. 16/021,216, filed on Jun. 28, 2018, granted, now 10,763,168, issued on Sep. 1, 2020.
Application 17/994,153 is a continuation of application No. 17/007,661, filed on Aug. 31, 2020, granted, now 11,515,206.
Claims priority of provisional application 62/587,628, filed on Nov. 17, 2017.
Prior Publication US 2023/0093608 A1, Mar. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 23/532 (2006.01); H01L 21/8234 (2006.01); H01L 23/522 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/417 (2006.01)
CPC H01L 21/76897 (2013.01) [H01L 21/76816 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 23/5226 (2013.01); H01L 23/53261 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a gate structure over a substrate;
source/drain structures on opposite sides of the gate structure;
a dielectric layer over the gate structure and the source/drain structures; and
a via plug passing through the dielectric layer and comprising a first group IV element,
wherein the dielectric layer comprises a second group IV element, a first compound, and a second compound, and wherein the second compound comprises elements in the first compound and the first group IV element.