US 11,908,735 B2
Vias for cobalt-based interconnects and methods of fabrication thereof
Yu-Jen Chang, Hsinchu (TW); Min-Yann Hsieh, Kaohsiung (TW); Hua Feng Chen, Hsinchu (TW); and Kuo-Hua Pan, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Jul. 28, 2022, as Appl. No. 17/815,839.
Application 17/815,839 is a continuation of application No. 16/720,853, filed on Dec. 19, 2019, granted, now 11,404,309.
Application 16/720,853 is a continuation of application No. 15/692,212, filed on Aug. 31, 2017, granted, now 10,553,481, issued on Feb. 4, 2020.
Prior Publication US 2022/0375790 A1, Nov. 24, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/485 (2006.01)
CPC H01L 21/76846 (2013.01) [H01L 21/76873 (2013.01); H01L 21/76886 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53266 (2013.01); H01L 21/76813 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 21/76877 (2013.01); H01L 21/76882 (2013.01); H01L 23/485 (2013.01); H01L 23/532 (2013.01); H01L 23/53295 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a gate structure disposed over a substrate, wherein the gate structure is disposed between a first source/drain feature and a second source/drain feature;
a cobalt-containing contact disposed directly on the first source/drain feature, wherein the cobalt-containing contact includes a cobalt-containing bulk layer, the cobalt-containing contact has an upper portion above a top surface of the gate structure, the cobalt-containing contact has a lower portion below the top surface of the gate structure, and the upper portion is disposed in a first interlayer dielectric layer and a first contact etch stop layer;
a tungsten-containing via disposed directly on the cobalt-containing contact, wherein the tungsten-containing via is disposed in a second interlayer dielectric layer and a second contact etch stop layer, wherein the tungsten-containing via includes:
a tungsten-containing bulk layer disposed on the cobalt-containing contact, and
a titanium-and-nitrogen-containing barrier layer disposed along a bottom and a sidewall of the tungsten-containing bulk layer; and
a copper-containing trace disposed directly on the tungsten-containing via, wherein the copper-containing trace is disposed in a third interlayer dielectric layer and a third contact etch stop layer.