CPC H01L 21/76816 (2013.01) [G03F 1/38 (2013.01); H01L 21/0337 (2013.01); H01L 21/3088 (2013.01)] | 15 Claims |
1. A method of forming a pitch pattern, comprising:
forming two adjacent mandrels separated by a first distance, D1, on a substrate;
forming a first set of alternating sidewall spacers between the two adjacent mandrels;
removing the two adjacent mandrels;
forming a second set of alternating sidewall spacers after removing the two adjacent mandrels; and
forming a third set of alternating sidewall spacers on opposite sides of the first set of sidewall spacers.
|
10. A method of forming a pitch pattern, comprising:
forming two adjacent mandrels separated by a first distance, D1, on a substrate;
forming a first sidewall spacer on opposite sides of each of the two adjacent mandrels, wherein the first sidewall spacers are made of a first material;
removing the two adjacent mandrels;
forming a second sidewall spacer adjoining each of the first sidewall spacers after the removing the two adjacent mandrels, where the second sidewall spacers are made of a second material different from the first material;
forming a third sidewall spacer adjoining each of the second sidewall spacers, where the third sidewall spacers are made of the first material; and
forming a fourth sidewall spacer adjoining each of the third sidewall spacers, where the fourth sidewall spacers are made of the second material.
|