CPC H01L 21/3065 (2013.01) [H01J 37/3053 (2013.01); H01J 37/3056 (2013.01); H01J 37/317 (2013.01); H01J 37/3172 (2013.01); H01J 37/32412 (2013.01)] | 20 Claims |
1. A method for manufacturing a semiconductor structure, comprising:
providing a substrate comprising a first atom and a second atom;
dispatching an etchant from an ionizer;
forming a compound over the substrate by bonding the first atom with the etchant;
releasing a particle from an implanter; and
removing the compound by bombarding the compound with the particle having an energy smaller than a bonding energy between the first atom and the second atom, wherein the etchant and the particle comprise different ions.
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