US 11,906,997 B2
Low-dropout (LDO) voltage regulator including amplifier and decoupling capacitor
Szu-Chun Tsao, Hsinchu (TW); Yi-Wen Chen, Hsinchu (TW); and Jaw-Juinn Horng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 30, 2021, as Appl. No. 17/456,934.
Claims priority of provisional application 63/188,992, filed on May 14, 2021.
Prior Publication US 2022/0365550 A1, Nov. 17, 2022
Int. Cl. G05F 1/575 (2006.01); G05F 1/565 (2006.01); H03K 19/0185 (2006.01)
CPC G05F 1/575 (2013.01) [G05F 1/565 (2013.01); H03K 19/018521 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A Low-Dropout voltage regulator (LDO) comprising:
an amplifier supplied with a voltage reference (VREF) input, the amplifier configured to produce a source current to or a sinking current from a load; and
a decoupling capacitor, connected to an output of the amplifier, configured to decouple a high-edge ground (HGND) from a power source, the decoupling capacitor including a first capacitor and a second capacitor attached with the load, wherein the first capacitor is a pure Metal-Oxide-Metal (MOM) capacitor (CMOM) and the second capacitor is a core P-type Metal Oxide Semiconductor Capacitor (PMOSCAP), wherein one or more Metal Oxide Semiconductor Field Effect Transistors (MOSFETS) is placed beneath the CMOM to get a highest capacitance density.