US 11,906,902 B2
Semiconductor processing tool and methods of operation
Tai-Yu Chen, Hsinchu (TW); Shang-Chieh Chien, New Taipei (TW); Sheng-Kang Yu, Hsinchu (TW); Li-Jui Chen, Hsinchu (TW); and Heng-Hsin Liu, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 21, 2022, as Appl. No. 17/655,708.
Claims priority of provisional application 63/260,003, filed on Aug. 6, 2021.
Prior Publication US 2023/0038668 A1, Feb. 9, 2023
Int. Cl. G03F 7/00 (2006.01); H05G 2/00 (2006.01)
CPC G03F 7/70033 (2013.01) [H05G 2/008 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
generating a pre-pulse laser beam;
providing, to an extreme ultraviolet (EUV) radiation source, the pre-pulse laser beam to generate a deformed droplet from a droplet of a target material in a vessel of the EUV radiation source;
splitting a laser output into a first portion and a second portion;
generating, based on the first portion, a main-pulse laser beam having a first spatial energy-distribution profile;
generating, based on the second portion, an auxiliary laser beam having a second spatial energy-distribution profile,
wherein the second spatial energy-distribution profile is based on the first spatial energy-distribution profile to achieve a target spatial energy-distribution profile for a combination of the main-pulse laser beam and the auxiliary laser beam; and
providing, to the EUV radiation source, the main-pulse laser beam and the auxiliary laser beam to generate a plasma from the deformed droplet in the vessel of the EUV radiation source.