US 11,906,901 B2
Alternating copolymer chain scission photoresists
Dario Goldfarb, Dobbs Ferry, NY (US); Ekmini Anuja De Silva, Slingerlands, NY (US); Jing Guo, Niskayuna, NY (US); Jennifer Church, Albany, NY (US); and Luciana Meli, Albany, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Jun. 7, 2021, as Appl. No. 17/340,300.
Prior Publication US 2022/0390845 A1, Dec. 8, 2022
Int. Cl. G03F 7/004 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01)
CPC G03F 7/0392 (2013.01) [G03F 7/0042 (2013.01); G03F 7/0043 (2013.01); G03F 7/2004 (2013.01)] 9 Claims
 
1. A process of forming a polymer resist, comprising:
providing an alternating copolymer having repeat units each comprising an ultraviolet (EUV)-absorbing element A; and
reacting end groups of the alternating copolymer with monofunctional monomers selected from the group consisting of trimethyltin hydride, triethyltin hydride, tripropyltin hydride, tributyltin hydride, triphenyltin hydride, trimethyltin diethylamide, triethyltin diethylamide, tripropyltin diethylamide, tri-n-butyltin diethylamide, tri-t-butyltin diethylamide, trimethyltellurium iodide, tetraphenylantimony bromide, tetra-m-tolylbismuth iodide, and tetramethylbismuth chloride to form a polymer having the following structure:

OG Complex Work Unit Chemistry
 wherein:
n is an integer greater than 1
x=2 or 3; and
R, R′, R″, and R′″ are each hydrocarbon ligands.