US 11,906,897 B2
Method for extreme ultraviolet lithography mask treatment
Pei-Cheng Hsu, Taipei (TW); Yih-Chen Su, Taichung (TW); Chi-Kuang Tsai, Hsinchu (TW); Ta-Cheng Lien, Hsinchu County (TW); Tzu Yi Wang, Hsinchu (TW); Jong-Yuh Chang, Hsinchu County (TW); and Hsin-Chang Lee, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 17, 2021, as Appl. No. 17/350,685.
Application 17/350,685 is a continuation of application No. 15/956,189, filed on Apr. 18, 2018, granted, now 11,048,158.
Prior Publication US 2021/0311383 A1, Oct. 7, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 1/24 (2012.01); G03F 1/26 (2012.01); G03F 7/00 (2006.01); H01L 21/263 (2006.01); G03F 1/80 (2012.01); G03F 1/84 (2012.01)
CPC G03F 1/24 (2013.01) [G03F 1/26 (2013.01); G03F 1/80 (2013.01); G03F 1/84 (2013.01); G03F 7/70433 (2013.01); G03F 7/70466 (2013.01); H01L 21/2633 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A reflective mask, comprising:
a substrate; and
a first stack of multiple layers disposed over the substrate and comprising:
a first reflective multilayer over the substrate,
a first capping layer over the first reflective multilayer,
a first absorber layer over the first capping layer, wherein the first absorber layer includes a first material and comprises a top surface, and
a first protection layer disposed directly on the top surface of the first absorber layer and includes a second material,
wherein a ratio of nitrogen to tantalum (N/Ta) in the first protection layer is greater than or equal to 1.25.