US 11,906,457 B2
Light-activated gas sensor based on 3D nanostructure operable at low temperature with high performance and method for manufacturing the same
Seokwoo Jeon, Daejeon (KR); Donghwi Cho, Daejeon (KR); and Youngsuk Shim, Daejeon (KR)
Assigned to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, Daejeon (KR)
Filed by KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, Daejeon (KR)
Filed on Aug. 16, 2021, as Appl. No. 17/403,389.
Claims priority of application No. 10-2020-0103418 (KR), filed on Aug. 18, 2020.
Prior Publication US 2022/0057353 A1, Feb. 24, 2022
Int. Cl. G01N 27/12 (2006.01); G01N 33/00 (2006.01)
CPC G01N 27/128 (2013.01) [G01N 27/125 (2013.01); G01N 33/0027 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A light-activated gas sensor comprising:
a first electrode disposed on a substrate;
a second electrode disposed on the substrate and spaced apart from the first electrode; and
a sensitive member disposed on the substrate and contacting the first and second electrodes and having a nano-shell structure with three-dimensional (3D) network shape, the nano-shell structure including a plurality of nano-shells respectively having a 3D layer shape to define and surround pores that are ordered with periodicity and connected to each other, the sensitive member including a metal oxide semiconductor as a gas-sensitive material,
wherein a thickness of the sensitive member is 5 μm to 10 μm, and a thickness of the shells is 10 nm to 40 nm.