US 11,906,365 B2
Long-wave infrared sensor and electronic device including the same
Byungkyu Lee, Seoul (KR); Jinmyoung Kim, Hwaseong-si (KR); Byonggwon Song, Seoul (KR); Yooseong Yang, Yongin-si (KR); Duhyun Lee, Yongin-si (KR); and Hyuck Choo, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 5, 2022, as Appl. No. 17/737,183.
Claims priority of application No. 10-2021-0137824 (KR), filed on Oct. 15, 2021.
Prior Publication US 2023/0124189 A1, Apr. 20, 2023
Int. Cl. G01J 5/58 (2022.01); G01J 5/10 (2006.01); H04N 5/33 (2023.01); G01J 5/00 (2022.01)
CPC G01J 5/58 (2013.01) [G01J 5/10 (2013.01); H04N 5/33 (2013.01); G01J 2005/0077 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A long-wave infrared (LWIR) sensor comprising:
a substrate;
a magnetic resistance device on the substrate; and
an LWIR absorption layer on the magnetic resistance device, the LWIR absorption layer being configured to absorb LWIR rays and generate heat,
wherein a resistance of the magnetic resistance device changes based on temperature change based on the heat generated by the LWIR absorption layer.