US 11,906,291 B2
Method of calculating thickness of graphene layer and method of measuring content of silicon carbide by using XPS
Eunkyu Lee, Yongin-si (KR); Yeonchoo Cho, Seongnam-si (KR); Sangwon Kim, Seoul (KR); Kyung-Eun Byun, Seongnam-si (KR); Hyunjae Song, Hwaseong-si (KR); and Hyeonjin Shin, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 11, 2021, as Appl. No. 17/145,966.
Claims priority of application No. 10-2020-0063274 (KR), filed on May 26, 2020.
Prior Publication US 2021/0372786 A1, Dec. 2, 2021
Int. Cl. G01B 15/02 (2006.01); G01N 23/2208 (2018.01); H01L 21/285 (2006.01); H01L 21/66 (2006.01); H01L 29/45 (2006.01); G01N 23/2273 (2018.01)
CPC G01B 15/02 (2013.01) [G01N 23/2208 (2013.01); G01N 23/2273 (2013.01); H01L 21/28512 (2013.01); H01L 22/12 (2013.01); H01L 29/45 (2013.01); G01N 2223/085 (2013.01); G01N 2223/61 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method of measuring a thickness of a graphene layer directly grown on a silicon substrate, by using an X-ray photoelectron spectroscopy (XPS) instrument, the method comprising:
emitting X-ray radiation toward the graphene layer directly grown on the silicon substrate using a source on the XPS instrument;
obtaining signal intensities from the graphene layer directly grown on the silicon substrate in response to emitting the X-ray radiation toward the graphene layer directly grown on the silicon substrate using a sensor on the XPS instrument; and
calculating the thickness tG of the graphene layer according to an equation below,

OG Complex Work Unit Math
λREAL is an effective attenuation length,
α is a detection angle for the XPS instrument,
Ico is a signal intensity of a photoelectron beam emitted from bulk-type graphene,
Isio is a signal intensity of a photoelectron beam emitted from bulk-type silicon,
Ic is a signal intensity of a photoelectron beam emitted from the graphene layer and obtained by the sensor on the XPS instrument in response to the graphene layer receiving X-ray radiation by the XPS instrument, and
Isi is a signal intensity of a photoelectron beam emitted from the silicon substrate and obtained by the sensor on the XPS instrument in response to the silicon substrate receiving X-ray radiation by the XPS instrument,
wherein R0 is obtained by a linear relationship between the signal intensity Isi of the photoelectron beam emitted from the silicon substrate and the signal intensity Ic of the photoelectron beam emitted from the graphene layer using the XPS instrument.