CPC C30B 25/22 (2013.01) [C30B 25/12 (2013.01); C30B 29/04 (2013.01); C30B 29/68 (2013.01)] | 18 Claims |
1. A method of forming a plurality of diamonds, the method comprising:
providing a base;
epitaxially forming a first sacrificial layer on the base, the first sacrificial layer having a first material composition;
epitaxially forming a first diamond layer on the first sacrificial layer, the first diamond layer being a material that is different from the first material composition;
epitaxially forming a second sacrificial layer on the first diamond layer, the second sacrificial layer having the first material composition;
the first sacrificial layer, and the first diamond layer defining repeating layers of a heteroepitaxial super-lattice;
epitaxially forming a second diamond layer on the second sacrificial layer; and
separating the first and second diamond layers from the first and second sacrificial layers to produce free standing, single crystal diamonds.
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