US 11,905,619 B2
Diamonds and hetero-epitaxial methods of forming diamonds
John P. Ciraldo, Chicago, IL (US); and Jonathan Levine-Miles, Chicago, IL (US)
Assigned to M7D Corporation, Beltsville, MD (US)
Filed by M7D Corporation, Beltsville, MD (US)
Filed on Nov. 3, 2021, as Appl. No. 17/518,360.
Application 17/518,360 is a continuation of application No. 16/811,926, filed on Mar. 6, 2020, granted, now 11,198,950.
Application 16/811,926 is a continuation of application No. PCT/US2018/050061, filed on Sep. 7, 2018.
Claims priority of provisional application 62/555,765, filed on Sep. 8, 2017.
Prior Publication US 2022/0056615 A1, Feb. 24, 2022
Int. Cl. C30B 25/22 (2006.01); C30B 25/12 (2006.01); C30B 29/04 (2006.01); C30B 29/68 (2006.01)
CPC C30B 25/22 (2013.01) [C30B 25/12 (2013.01); C30B 29/04 (2013.01); C30B 29/68 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of forming a plurality of diamonds, the method comprising:
providing a base;
epitaxially forming a first sacrificial layer on the base, the first sacrificial layer having a first material composition;
epitaxially forming a first diamond layer on the first sacrificial layer, the first diamond layer being a material that is different from the first material composition;
epitaxially forming a second sacrificial layer on the first diamond layer, the second sacrificial layer having the first material composition;
the first sacrificial layer, and the first diamond layer defining repeating layers of a heteroepitaxial super-lattice;
epitaxially forming a second diamond layer on the second sacrificial layer; and
separating the first and second diamond layers from the first and second sacrificial layers to produce free standing, single crystal diamonds.