CPC C23C 16/274 (2013.01) [C23C 16/272 (2013.01); C23C 16/277 (2013.01); C23C 16/52 (2013.01)] | 18 Claims |
1. A chemical vapor deposition (CVD) process for producing diamond, the process comprising:
providing a CVD growth chamber containing a growth substrate;
charging the CVD growth chamber with a gas mixture, the gas mixture comprising a carbon source gas;
activating the gas mixture to facilitate growth of diamond on the growth substrate; and
providing for a period of diamond growth during which the gas mixture is sealed within the CVD growth chamber.
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