US 11,905,446 B2
Doped semiconductor nanocrystals, method for preparing same and uses thereof
Tugce Akdas, Grenoble (FR); and Peter Reiss, Grenoble (FR)
Assigned to COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Appl. No. 17/418,347
Filed by COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR)
PCT Filed Dec. 23, 2019, PCT No. PCT/FR2019/053287
§ 371(c)(1), (2) Date Jun. 25, 2021,
PCT Pub. No. WO2020/136347, PCT Pub. Date Jul. 2, 2020.
Claims priority of application No. 1874171 (FR), filed on Dec. 26, 2018.
Prior Publication US 2022/0064525 A1, Mar. 3, 2022
Int. Cl. C09K 11/70 (2006.01); C09K 11/74 (2006.01); C30B 7/14 (2006.01); C30B 29/40 (2006.01); H01L 31/055 (2014.01); H01L 33/50 (2010.01)
CPC C09K 11/70 (2013.01) [C30B 7/14 (2013.01); C30B 29/40 (2013.01); H01L 31/055 (2013.01); H01L 33/502 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A set of nanocrystals comprising a semiconductor, said semiconductor comprising A and B, wherein A represents a metal or metalloid in the +III oxidation state and B represents an element in the −III oxidation state, said nanocrystals being doped by an atom of C, wherein C is selected from the transition metals in the +I or +II oxidation state, and wherein the nanocrystals are doped on an average of one atom of C per nanocrystal.