US 11,905,170 B2
MEMS tab removal process
Daesung Lee, San Jose, CA (US); and Alan Cuthbertson, San Jose, CA (US)
Assigned to InvenSense, Inc., San Jose, CA (US)
Filed by InvenSense, Inc., San Jose, CA (US)
Filed on Dec. 10, 2021, as Appl. No. 17/547,388.
Claims priority of provisional application 63/199,240, filed on Dec. 15, 2020.
Prior Publication US 2022/0185662 A1, Jun. 16, 2022
Int. Cl. B81C 1/00 (2006.01)
CPC B81C 1/00896 (2013.01) [B81C 2203/0785 (2013.01)] 31 Claims
OG exemplary drawing
 
1. A method comprising:
forming a pre-cut in a tab region disposed between a first die and a second die, wherein the tab region structurally connects the first die to the second die, wherein the first die comprises a first Micro-Electromechanical System (MEMS) device eutecticly bonded to a first semiconductor device, and wherein the second die comprises a second MEMS device eutecticly bonded to a second semiconductor device, wherein the tab region includes a handle wafer layer disposed over a fusion bond oxide layer that is disposed on an actuator (ACT) layer, wherein the tab region is positioned above a semiconductor tab region, and wherein the tab region, the first die, the second die, and the semiconductor tab region form a cavity therein;
tab dicing a first region of the tab region that corresponds to the pre-cut that cuts through the handle wafer layer, the fusion bond oxide layer, and the ACT layer to expose the semiconductor tab region;
tab dicing a second region of the tab region that cuts through the handle wafer layer and that leaves a portion of the ACT layer underneath to form an ACT tether, wherein the ACT tether structurally maintains the tab region in place and above the semiconductor tab region; and
subsequent to the tab dicing the first region and the second region, removing the tab region.