US 11,904,430 B2
Temperature control in chemical mechanical polish
Kei-Wei Chen, Tainan (TW); and Chih Hung Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 15, 2019, as Appl. No. 16/511,649.
Application 16/511,649 is a continuation of application No. 15/664,092, filed on Jul. 31, 2017, granted, now 10,350,724.
Prior Publication US 2019/0337115 A1, Nov. 7, 2019
Int. Cl. B24B 37/015 (2012.01); B24B 37/20 (2012.01); B24B 37/30 (2012.01); B24B 53/017 (2012.01)
CPC B24B 37/015 (2013.01) [B24B 37/20 (2013.01); B24B 37/30 (2013.01); B24B 53/017 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a polishing pad;
a pad conditioner adjacent to the polishing pad, wherein the pad conditioner comprises a first channel and a second channel therein;
a heat-exchange supplying unit connected to the first channel; and
a control unit configured to control operations of the pad conditioner and the heat-exchange supplying unit, wherein the control unit is configured to:
in response to a first temperature of the polishing pad lower than a pre-set temperature range, turning on conduction of a heating media from the heat-exchange supplying unit into the first channel; and
in response to a second temperature of the polishing pad higher than the pre-set temperature range, turning on conduction of a cooling media from the heat-exchange supplying unit into the second channel; and
in response to a third temperature of the polishing pad in the pre-set temperature range, conducting additional heat-exchange medias other than the heating media and the cooling media into both of the first channel and the second channel, wherein the additional heat-exchange medias have temperatures substantially the same as the third temperature.