| CPC B23H 9/02 (2013.01) [B23H 3/02 (2013.01); B23H 3/08 (2013.01); B23H 5/04 (2013.01); B23H 2300/10 (2013.01)] | 3 Claims |
|
1. A silicon-based material micro-part electrochemical discharge energizing fine grinding method, the electrochemical discharge auxiliary fine grinding device needed by the method comprises a micro-grinding tool (1), a grinding liquid (2), a workpiece (3), an auxiliary electrode (4), a tank (5) and a pulse direct current power supply (6);
the grinding liquid (2) is filled in the tank (5); the micro-grinding tool (1), the workpiece (3) and the auxiliary electrode (4) are soaked in the grinding liquid (2);
the micro-grinding tool (1) is composed of a conductive grinding tool base body (1-1), a conductive electroplated layer (1-2) and an insulating super-hard abrasive material (1-3);
the micro-grinding tool (1) is connected with negative electrode direct current power supply (6) to form the negative electrode the grinding liquid (2) is composed of H2O2, Na2CO3, EDTA-Fe—Na and deionized water, and the grinding liquid has conductivity; the material of the workpiece (3) is a hard and brittle conductive silicon-based material which needs to process a large amount of micro-structure (3-1) on the surface, the workpiece (3) is placed near the micro-grinding tool (1); the auxiliary electrode (4) is composed of a large inert conductive material, positive electrode with the pulse direct current power supply (6), and the conductive grinding liquid (2), a positive electrode size of the auxiliary electrode (4) is 1 to 2 orders of magnitude larger than the micro-grinding tool (1);
wherein the processing process is as follows:
step one, electrochemical reaction hydrogen evolution film: when the current of the pulse direct current power supply (6) passes through the loop, the micro-grinding tool (1) generates electrochemical hydrogen evolution reaction the grinding liquid (2), H+ in the grinding liquid (2) negative electrode to obtain electron generating hydrogen bubbles (9) and attached on the outer circumference of the micro-grinding tool (1), multiple hydrogen bubbles (9) are fused to form an insulating gas film (7), the insulating gas film (7) separates the micro-grinding tool (1) from the grinding liquid (2), and hydrogen evolution reaction; at the same time an oxygen evolution reaction occurs at the auxiliary electrode (4), the OH− of the grinding liquid (2) loses an electron to generate O2, because the size of the auxiliary electrode (4) is 1 to 2 orders of magnitude larger than the micro-grinding tool (1) the auxiliary electrode (4) is not enough to form an air film;
step two, electrochemical discharge: under the action of the voltage of the pulse direct current power supply (6), two sides of the insulating gas film (7) accumulate a plurality of charged particles and form a local strong electric field, wherein the micro-grinding tool (1) is aggregated with free electrons, the grinding liquid (2) is aggregated with positive ions, when the voltage reaches the critical discharge voltage, the insulating film (7) is broken down, a discharge channel is formed between the micro-grinding tool (1) and the grinding liquid (2), the charged particles form electrochemical discharge and generate discharge spark (8) in the high speed directional movement of the discharge channel;
step three, material modification of the workpiece (3): the discharge spark (8) directly ablating the adjacent workpiece (3), the workpiece (3) is located in the discharge centre of a small amount of material temperature and can be increased to the melting, gasification temperature so as to be directly etched; the workpiece (3) is located near the discharge center of the material, the temperature is suddenly changed to generate heat influence layer (10-1) so as to realize the ablation and softening of the workpiece (3), namely the physical modification of the surface material of the workpiece (3); at the same time, the thermal energy generated by electrochemical discharge acts on the piece workpiece (3) and the grinding liquid (2) and makes the temperature rise, the temperature rise promotes the chemical reaction of the workpiece (3) of the silicon-based material and the grinding liquid (2), the chemical reaction comprises: H2O2 in the grinding liquid (2) generates *OH under the catalysis of Fe2+, reacting the *OH with the silicon-based material to generate SiO2, wherein the SiO2 further reacts with the OH− generated by the Na2CO3 in the grinding liquid (2) to generate the silicate (10-2), finally, the surface layer material of the workpiece (3) is converted into the soft silicate (10-2) material by the hard and brittle silicon-based material, namely the chemical modification of the surface material of the workpiece (3); the heat affected layer (10-1) generated by physical modification and the silicate (10-2) generated by chemical modification together form a modified layer (10), by controlling the electric parameter of the pulse direct current power supply (6), capable of realizing localized electrochemical discharge modification of the workpiece (3);
step four, cooling pulse direct current power supply (6) enters the pulse interval the voltage between the micro-grinding tool (1) and the grinding liquid (2) is reduced to zero, the discharge spark (8) and the insulating gas film (7) disappear, the grinding liquid (2) and the micro-grinding tool (1) are contact the grinding liquid (2) cools the micro-grinding tool (1) and the workpiece (3), and discharges the etching product;
step five, grinding the modified layer (10): the mechanical property of the modified layer (10) generated under the electrochemical discharge physical modification and chemical modification coupling is reduced, the micro-grinding tool (1) rotates at high speed and continuously feeds current, the modified layer (10) is grinded by the ultra-hard grinding material (1-3) on the micro-grinding tool (1), the generation of the modified layer (10) increases the maximum non-deformation chip thickness of the fine grinding technique brittle-plastic domain removing transition so that the hard brittle workpiece material removing is changed from brittle removing direction to relatively stable ductility removing direction so as to realize high precision processing of hard and brittle conductive silicon-based material workpiece (3); and
step six, repeating step one to step five, the micro-grinding tool (1) feeding along the preset processing path, the surface of the workpiece (3) is processed with a large amount of micro-structure (3-1).
|