US 12,232,435 B2
Chip containing an onboard non-volatile memory comprising a phase-change material
Franck Arnaud, St. Nazaire les Eymes (FR); David Galpin, Le Cheylas (FR); Stephane Zoll, Froges (FR); Olivier Hinsinger, Barraux (FR); Laurent Favennec, Villard Bonnot (FR); Jean-Pierre Oddou, Saint-Ismier (FR); Lucile Broussous, Goncelin (FR); Philippe Boivin, Venelles (FR); Olivier Weber, Grenoble (FR); Philippe Brun, Meylan (FR); and Pierre Morin, Kessel-Lo (BE)
Assigned to STMicroelectronics (Crolles 2) SAS, Crolles (FR); STMicroelectronics (Grenoble 2) SAS, Grenoble (FR); and STMicroelectronics (Rousset) SAS, Rousset (FR)
Filed by STMicroelectronics (Crolles 2) SAS, Crolles (FR); STMicroelectronics (Grenoble 2) SAS, Grenoble (FR); and STMicroelectronics (Rousset) SAS, Rousset (FR)
Filed on Apr. 3, 2023, as Appl. No. 18/130,184.
Application 18/130,184 is a division of application No. 16/184,246, filed on Nov. 8, 2018, granted, now 11,653,582.
Claims priority of application No. 1760543 (FR), filed on Nov. 9, 2017.
Prior Publication US 2023/0263082 A1, Aug. 17, 2023
Int. Cl. H10B 63/00 (2023.01); G11C 13/00 (2006.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/8616 (2023.02) [G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); H10B 63/30 (2023.02); H10B 63/80 (2023.02); H10N 70/011 (2023.02); H10N 70/021 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8265 (2023.02); H10N 70/8413 (2023.02); H10N 70/882 (2023.02); G11C 2013/008 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An integrated circuit, comprising:
a substrate containing an active area;
a first insulating layer stacked on the substrate;
a via extending through the first insulating layer to contact the active area;
a second insulating layer stacked on the first insulating layer;
a phase-change material stacked on the second insulating layer;
a heating element in the second insulating layer, the heating element being L-shaped with:
a first side extending from, and in direct physical contact with, a top side of the via to make direct physical contact with a bottom side of the phase-change material; and
a second side, shorter than the first side, extending along and in direct physical contact with the top side of the via;
a first insulating spacer in the second insulating layer, a first sidewall of the first insulating spacer being planar in shape and in direct physical contact with a first face of the first side of the heating element, a second sidewall of the first insulating spacer being opposite to the first sidewall and convex in shape, a bottom face of the first insulating spacer being planar in shape and in direct physical contact with the second side of the heating element;
a second insulating spacer in the second insulating layer and having a first sidewall that is concave in shape and in direct physical contact with the second sidewall of the first insulating spacer, wherein the second insulating spacer has a second sidewall opposite to its first sidewall that is concave in shape and in direct physical contact with a thermally insulating portion of the second insulating layer; and
a third insulating spacer in the second insulating layer and having a first sidewall that is planar in shape and in direct physical contact with a second face of the first side of the heating element opposite to the first face of the first side of the heating element.