US 12,232,429 B2
Semiconductor device including data storage material pattern
Jeonghee Park, Hwaseong-si (KR); Dongho Ahn, Hwaseong-si (KR); and Wonjun Park, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 26, 2021, as Appl. No. 17/384,933.
Claims priority of application No. 10-2020-0118176 (KR), filed on Sep. 15, 2020.
Prior Publication US 2022/0085286 A1, Mar. 17, 2022
Int. Cl. H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [H10B 63/80 (2023.02); H10N 70/841 (2023.02); H10N 70/8828 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a lower structure;
a first conductive line on the lower structure and extending in a first horizontal direction;
a second conductive line on the first conductive line and extending in a second horizontal direction, the second horizontal direction being perpendicular to the first horizontal direction; and
a memory cell structure between the first conductive line and the second conductive line, wherein
the memory cell structure includes a data storage material pattern and a selector material pattern overlapping the data storage material pattern in a vertical direction,
the data storage material pattern includes a phase change material layer of InαGeβSbγTeδ and a first additional phase change material layer overlapping the phase change material layer of InαGeβSbγTeδ,
in the phase change material layer of InαGeβSbγTeδ, a sum of α and β is lower than about 30 at. %, and a sum of γ and δ is higher than about 70 at. %, and
the first additional phase change material layer is a phase change material layer without In or a phase change material layer having a lower In content than the phase change material layer of InαGeβSbγTeδ.