US 12,232,427 B2
Superconducting qubit capacitance and frequency of operation tuning
Douglas M. Gill, South Orange, NJ (US); Martin O. Sandberg, Ossining, NY (US); Vivekananda P. Adiga, Ossining, NY (US); Jason S. Orcutt, Katonah, NY (US); and Jerry M. Chow, White Plains, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Dec. 9, 2022, as Appl. No. 18/063,722.
Application 18/063,722 is a division of application No. 16/752,146, filed on Jan. 24, 2020, granted, now 11,552,236.
Prior Publication US 2023/0320236 A1, Oct. 5, 2023
Int. Cl. G06N 10/00 (2022.01); H10N 60/12 (2023.01); H10N 60/80 (2023.01); B82Y 10/00 (2011.01)
CPC H10N 60/805 (2023.02) [G06N 10/00 (2019.01); H10N 60/12 (2023.02); B82Y 10/00 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A quantum mechanical device, comprising:
a substrate having a frontside and a backside, the frontside having at least one qubit formed on the frontside, and the at least one qubit comprising a first capacitor pad and a second capacitor pad having a gap reserved between the first capacitor pad and the second capacitor pad,
wherein the substrate comprises at least an area below the gap to form a trench, wherein a base of the trench is wider than the gap and extends under an entirety of the gap to alter a capacitance around the at least one qubit so as to adjust a resonance frequency of the at least one qubit.