US 12,232,426 B2
Spin-orbit torque type magnetoresistance effect element, and method for producing spin-orbit torque type magnetoresistance effect element
Tomoyuki Sasaki, Tokyo (JP); and Yohei Shiokawa, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Filed by TDK CORPORATION, Tokyo (JP)
Filed on Sep. 12, 2023, as Appl. No. 18/367,135.
Application 18/367,135 is a division of application No. 17/978,496, filed on Nov. 1, 2022, granted, now 11,793,088.
Application 17/978,496 is a division of application No. 16/547,670, filed on Aug. 22, 2019, granted, now 11,522,124, issued on Dec. 6, 2022.
Application 16/547,670 is a division of application No. 15/702,290, filed on Sep. 12, 2017, granted, now 10,439,130, issued on Oct. 8, 2019.
Claims priority of application No. 2016-210530 (JP), filed on Oct. 27, 2016; and application No. 2017-138384 (JP), filed on Jul. 14, 2017.
Prior Publication US 2024/0008370 A1, Jan. 4, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 52/00 (2023.01); G11C 11/16 (2006.01); G11C 11/18 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 52/80 (2023.01)
CPC H10N 52/101 (2023.02) [G11C 11/161 (2013.01); G11C 11/18 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/80 (2023.02); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01)] 8 Claims
OG exemplary drawing
 
1. An unit cell in an integrated circuit comprising a spin-orbit torque type magnetoresistance effect element and a control element,
wherein the spin-orbit torque type magnetoresistance effect element, a first control element, and a second control element; comprising:
a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and
spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer;
wherein
the magnetization of the first ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element;
the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element;
the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction;
the first control element is a write transistor comprising a source electrode, a drain electrode and a channel;
one of the source and drain of the write transistor is coupled to the spin-orbit torque type magnetoresistance at a first end;
the first control element is arranged in a third direction from the source electrode to the drain electrode; and
the third direction is in parallel in the second direction;
the second control element is a read transistor comprising a source electrode, a drain electrode and a channel;
one of the source and drain of the read transistor is coupled to the spin-orbit torque type magnetoresistance at a second end.