US 12,232,370 B2
Display substrate motherboard and preparation method thereof, display substrate and preparation method thereof
Jun Yu, Beijing (CN); Zhong Lu, Beijing (CN); Zhenrui Fan, Beijing (CN); Shuohua Chen, Beijing (CN); Zhaoyang Song, Beijing (CN); Chenlin Yin, Beijing (CN); and Yongjie Tang, Beijing (CN)
Assigned to Chengdu BOE Optoelectronics Technology Co., Ltd., Sichuan (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Filed by Chengdu BOE Optoelectronics Technology Co., Ltd., Chengdu (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Filed on Sep. 25, 2023, as Appl. No. 18/473,538.
Application 18/473,538 is a continuation of application No. 16/964,423, granted, now 11,818,922, previously published as PCT/CN2019/109032, filed on Sep. 29, 2019.
Prior Publication US 2024/0016008 A1, Jan. 11, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10K 59/124 (2023.01); H10K 59/12 (2023.01); H10K 71/00 (2023.01); H10K 77/10 (2023.01); H10K 102/00 (2023.01)
CPC H10K 59/124 (2023.02) [H10K 71/00 (2023.02); H10K 77/111 (2023.02); H10K 59/1201 (2023.02); H10K 2102/311 (2023.02); H10K 2102/351 (2023.02)] 16 Claims
OG exemplary drawing
 
1. An Organic Light-Emitting Diode display substrate, comprising:
a first flexible organic layer;
a first inorganic layer on the first flexible organic layer;
a second flexible organic layer on the first inorganic layer;
a pixel driving circuit layer on the second flexible organic layer;
a light-emitting element layer on the pixel driving circuit layer;
wherein a thickness of the first flexible organic layer is 5 μm-20 μm, a thickness of the first inorganic layer is 0.4 μm-2 μm, and a thickness of the second flexible organic layer is 5 μm-20 μm;
wherein the first inorganic layer comprises a first inorganic sub-layer and a second inorganic sub-layer;
a material of the first inorganic sub-layer comprises one or more of silicon oxide, silicon nitride or silicon oxynitride,
wherein a thickness of the second inorganic sub-layer is 1 nm-50 nm.