US 12,232,346 B2
Quantum dot light-emitting device and driving method thereof, and display substrate
Tieshi Wang, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Appl. No. 17/770,153
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Mar. 22, 2021, PCT No. PCT/CN2021/082156
§ 371(c)(1), (2) Date Apr. 19, 2022,
PCT Pub. No. WO2022/198405, PCT Pub. Date Sep. 29, 2022.
Prior Publication US 2024/0147747 A1, May 2, 2024
Int. Cl. H10K 50/115 (2023.01); H10K 50/13 (2023.01); H10K 50/16 (2023.01)
CPC H10K 50/115 (2023.02) [H10K 50/13 (2023.02); H10K 50/166 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A quantum dot light-emitting device, comprising:
a first electrode;
a second electrode, arranged opposite to the first electrode;
a common electrode, located between the first electrode and the second electrode;
a first quantum dot light-emitting layer, located between the first electrode and the common electrode;
a second quantum dot light-emitting layer, located between the second electrode and the common electrode;
a first auxiliary functional layer, located between the first electrode and the first quantum dot light-emitting layer;
a second auxiliary functional layer, located between the first quantum dot light-emitting layer and the common electrode;
a third auxiliary functional layer, located between the second quantum dot light-emitting layer and the common electrode; and
a fourth auxiliary functional layer, located between the second electrode and the second quantum dot light-emitting layer;
wherein the second auxiliary functional layer and the third auxiliary functional layer are both electron transport layers, or the second auxiliary functional layer and the third auxiliary functional layer each comprises a hole injection layer and a hole transport layer, and the hole injection layers are located between the common electrode and the hole transport layers.