US 12,232,344 B2
Electroluminescent device including quantum dot light emitting diode (QLED) and manufacturing method thereof
Jinhui Gong, Huizhou (CN)
Assigned to HUIZHOU CHINA STAR OPTOELECTRONICS DISPLAY CO., LTD., Huizhou (CN); and TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen (CN)
Appl. No. 17/621,201
Filed by HUIZHOU CHINA STAR OPTOELECTRONICS DISPLAY CO., LTD., Huizhou (CN); and TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen (CN)
PCT Filed Nov. 8, 2021, PCT No. PCT/CN2021/129294
§ 371(c)(1), (2) Date Dec. 20, 2021,
PCT Pub. No. WO2023/070737, PCT Pub. Date May 4, 2023.
Claims priority of application No. 202111269155.1 (CN), filed on Oct. 29, 2021.
Prior Publication US 2024/0032318 A1, Jan. 25, 2024
Int. Cl. H10K 50/115 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 71/12 (2023.01)
CPC H10K 50/115 (2023.02) [H10K 71/12 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02)] 8 Claims
OG exemplary drawing
 
1. An electroluminescent device, comprising:
an anode, a hole function layer, a quantum dot emission layer, an electron function layer, and a cathode that are sequentially stacked, wherein
the quantum dot emission layer is doped with a carrier transport material, the carrier transport material comprises at least one of a hole transport material or an electron transport material,
the quantum dot emission layer comprises a quantum dot light emitting material, and a mass ratio of the carrier transport material to the quantum dot light emitting material is in a range of 0.1% to 2%;
the carrier transport material comprises a hole transport material and an electron transport material, and a doping mass ratio of the hole transport material to the electron transport material is in a range of 0.1-10.