US 12,232,342 B2
Organic semiconductor device, organic el device, photodiode sensor, display device, light-emitting apparatus, electronic device, and lighting device
Hiromi Seo, Kanagawa (JP); Takeyoshi Watabe, Kanagawa (JP); Airi Ueda, Kanagawa (JP); Yuta Kawano, Kanagawa (JP); Nobuharu Ohsawa, Kanagawa (JP); Hiromitsu Kido, Kanagawa (JP); and Satoshi Seo, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Dec. 16, 2021, as Appl. No. 17/552,638.
Claims priority of application No. 2020-219842 (JP), filed on Dec. 29, 2020.
Prior Publication US 2022/0216445 A1, Jul. 7, 2022
Int. Cl. H10K 50/11 (2023.01); H10K 30/20 (2023.01); H10K 50/15 (2023.01); H10K 59/12 (2023.01); H10K 85/60 (2023.01); H10K 101/30 (2023.01); H10K 101/40 (2023.01)
CPC H10K 50/11 (2023.02) [H10K 30/20 (2023.02); H10K 85/633 (2023.02); H10K 50/156 (2023.02); H10K 59/12 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02)] 21 Claims
OG exemplary drawing
 
1. An organic semiconductor device comprising:
an anode;
a cathode; and
a layer comprising an organic compound between the anode and the cathode,
wherein the layer comprises a hole-transport region,
wherein the hole-transport region comprises a first layer and a second layer,
wherein the first layer is positioned between the anode and the second layer, and
wherein, when a potential gradient of a surface potential of an evaporated film is set as GSP (mV/nm), a value obtained by subtracting GSP of an organic compound in the second layer from GSP of an organic compound in the first layer is less than or equal to 20 (mV/nm).