US 12,232,338 B2
Low-voltage operation dual-gate organic thin-film transistors and methods of manufacturing thereof
Mingqian He, Horseheads, NY (US); Jin Jang, Seoul (KR); Xiuling Li, Tianshui (CN); Robert George Manley, Vestal, NY (US); Karan Mehrotra, Painted Post, NY (US); and Nikolay Zhelev Zhelev, Painted Post, NY (US)
Assigned to CORNING INCORPORATED, Corning, NY (US); and UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Seoul (KR)
Appl. No. 17/608,291
Filed by Corning Incorporated, Corning, NY (US); and UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Seoul (KR)
PCT Filed May 7, 2020, PCT No. PCT/US2020/031741
§ 371(c)(1), (2) Date Nov. 2, 2021,
PCT Pub. No. WO2020/231710, PCT Pub. Date Nov. 19, 2020.
Claims priority of provisional application 62/846,070, filed on May 10, 2019.
Prior Publication US 2022/0209149 A1, Jun. 30, 2022
Int. Cl. H01L 29/08 (2006.01); H10K 10/46 (2023.01); H10K 85/10 (2023.01); H10K 71/00 (2023.01)
CPC H10K 10/482 (2023.02) [H10K 85/113 (2023.02); H10K 85/151 (2023.02); H10K 71/00 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A thin-film transistor (TFT), comprising:
a substrate;
an organic semiconductor (OSC) layer positioned on the substrate;
a dielectric layer positioned on the OSC layer; and
a polymeric interlayer disposed in-between the OSC layer and the dielectric layer,
wherein the dielectric layer is configured to exhibit a double layer capacitance effect,
wherein the OSC layer is a polymer blend comprising at least one organic semiconductor (OSC) polymer,
wherein the at least one OSC polymer is a diketopyrrolopyrrole-fused thiophene polymeric material, and
wherein the fused thiophene is beta-substituted.