US 12,232,335 B2
RRAM process integration scheme and cell structure with reduced masking operations
Zhichao Lu, San Jose, CA (US); and Brent Steven Haukness, Monte Sereno, CA (US)
Assigned to Hefei Reliance Memory Limited, Hefei (CN)
Filed by Hefei Reliance Memory Limited, Hefei (CN)
Filed on Aug. 18, 2022, as Appl. No. 17/890,837.
Application 17/890,837 is a continuation of application No. 16/994,993, filed on Aug. 17, 2020, granted, now 11,462,585.
Application 16/994,993 is a continuation of application No. 16/349,255, granted, now 10,777,608, issued on Sep. 15, 2020, previously published as PCT/US2017/061393, filed on Nov. 13, 2017.
Claims priority of provisional application 62/490,222, filed on Apr. 26, 2017.
Claims priority of provisional application 62/421,779, filed on Nov. 14, 2016.
Prior Publication US 2022/0406845 A1, Dec. 22, 2022
Int. Cl. H10N 70/20 (2023.01); G11C 7/12 (2006.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10B 63/80 (2023.02) [G11C 7/12 (2013.01); G11C 13/0007 (2013.01); G11C 13/003 (2013.01); H10B 63/82 (2023.02); H10N 70/021 (2023.02); H10N 70/063 (2023.02); H10N 70/24 (2023.02); H10N 70/801 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02); G11C 2213/52 (2013.01); G11C 2213/77 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A resistive random access memory (RRAM) comprising:
one or more bottom electrodes comprised of tungsten;
one or more switching layers comprised of hafnium oxide disposed above the one or more bottom electrodes, the one or more switching layers comprising a switchable filament;
one or more resistive layers disposed above the one or more switching layers, wherein the one or more resistive layers are comprised of a conductive metal oxide; and
wherein each bottom electrode comprises a via disposed below the one or more switching layers, wherein the via is directly in contact with the switching layer and the via is comprised of tungsten.