US 12,232,329 B2
Stacked ferroelectric structure
Rainer Yen-Chieh Huang, Changhua County (TW); Hai-Ching Chen, Hsinchu (TW); and Chung-Te Lin, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 26, 2023, as Appl. No. 18/359,248.
Application 17/987,066 is a division of application No. 17/184,856, filed on Feb. 25, 2021, granted, now 11,508,755, issued on Nov. 22, 2022.
Application 18/359,248 is a continuation of application No. 17/987,066, filed on Nov. 15, 2022.
Prior Publication US 2023/0371272 A1, Nov. 16, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H10B 51/30 (2023.01)
CPC H10B 51/30 (2023.02) [H01L 29/40111 (2019.08); H01L 29/516 (2013.01); H01L 29/6684 (2013.01); H01L 29/78391 (2014.09)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a first conductive electrode;
a stack structure overlying the first conductive electrode; and
a second conductive electrode overlying the stack structure;
wherein the stack structure comprises a first metal oxide layer overlying the first conductive electrode, a first ferroelectric layer overlying the first metal oxide layer, and a second metal oxide layer overlying the first ferroelectric layer and underlying the second conductive electrode, wherein the first metal oxide layer, the first ferroelectric layer, and the second metal oxide layer have a common width, wherein the first and second metal oxide layers have a common material composition, which is different than a material composition of the first ferroelectric layer, and wherein the first and second metal oxide layers are ferroelectric.