US 12,232,326 B2
Memory device and method of forming the same
Meng-Han Lin, Hsinchu (TW); and Feng-Cheng Yang, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 10, 2022, as Appl. No. 17/571,564.
Prior Publication US 2023/0225129 A1, Jul. 13, 2023
Int. Cl. H10B 51/20 (2023.01); H01L 23/48 (2006.01); H10B 43/20 (2023.01); H10B 51/10 (2023.01)
CPC H10B 51/20 (2023.02) [H01L 23/481 (2013.01); H10B 51/10 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a first conductive via;
a first conductive line, disposed on and in physical contact with the first conductive via;
an etch stop layer, disposed on and in physical contact with the first conductive line;
a plurality of stacks, disposed on the etch stop layer; and
a first conductive pillar, wherein the first conductive pillar is an integrally formed element and extends from a first surface of the stacks to a surface of the first conductive line, and a second surface opposite to the first surface of the stacks is disposed between the first surface of the stacks and the surface of the first conductive line.