| CPC H10B 43/10 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] | 14 Claims |
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1. A semiconductor storage device, comprising:
a plurality of conductor layers stacked in a first direction;
a plurality of bit lines spaced from one another in a second direction intersecting the first direction, each of the bit lines extending in a third direction intersecting the first and second directions;
a first row of pillars in the second direction, each of the pillars in the first row extending in the first direction through the plurality of conductor layers and having a semiconductor layer electrically connected to one bit line in the plurality of bit lines;
a second row of pillars in the second direction, each of the pillars in the second row extending in the first direction through the plurality of conductor layers and having a semiconductor layer electrically connected to one bit line in the plurality of bit lines;
a third row of pillars in the second direction, each of the pillars in the third row extending in the first direction through the plurality of conductor layers and at least one of the pillars in the third row having a semiconductor layer electrically connected to one bit line in the plurality of bit lines,
a fourth row of pillars in the second direction, each of the pillars in the fourth row extending in the first direction through the plurality of conductor layers and at least one of the pillars in the fourth row having a semiconductor layer electrically connected to one bit line in the plurality of bit lines,
the pillars in the first, second, third, and fourth rows being spaced from one another in the third direction and aligned in the third direction in this order; and
an insulator extending in the first direction into the plurality of conductor layers and electrically separating at least some of the conductor layers of the plurality of conductor layers into two different regions adjacent to each other in the third direction, wherein
at least a portion of a first straight line connecting centers of the pillars in the third row as viewed from the first direction overlaps at least a first portion of the insulator,
at least a portion of a second straight line connecting centers of the pillars in the fourth row as viewed from the first direction overlaps at least a second portion of the insulator, and
a first interval between adjacent pillars in the first row is less than a second interval between adjacent pillars in the third row.
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13. A semiconductor storage device, comprising:
a plurality of conductor layers stacked in a first direction;
a plurality of bit lines spaced from each other in a second direction intersecting the first direction, each of the bit lines extending in a third direction intersecting the first and second directions;
an insulator electrically separating at least some of the conductor layers into first and second regions adjacent to each other in the third direction;
a first group of rows of pillars, the pillars in each row of the first group of rows being spaced from each other in the second direction, each row in the first group being spaced from each other in the third direction, each of the pillars in the first group extending through the plurality of conductor layers in the first direction in the first region and having a semiconductor layer electrically connected to one of the bit lines; and
a second group of rows of pillars, the pillars in each row of the second group being spaced from each other in the second direction each row in the second group being spaced from each other in the third direction, each of the pillars in the second group extending through the plurality of conductor layers in the first direction in the second region and having a semiconductor layer electrically connected to one of the bit lines, wherein
the total number of rows in the first group is less than the total number of rows in the second group,
the first group of rows of pillars includes a first row of pillars and a second row of pillars,
a first interval along the second direction between adjacent pillars in the first row is less than a second interval along the second direction between adjacent pillars in the second row,
the second group of rows of pillars includes a third row of pillars and a fourth row of pillars,
a third interval along the second direction between adjacent pillars in the third row is less than a fourth interval along the second direction between adjacent pillars in the fourth row,
the first interval is equal to the third interval, and
the second interval is not equal to the fourth interval.
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