US 12,232,310 B2
Method of forming semiconductor structure and semiconductor structure
Peng Yang, Hefei (CN); and Gongyi Wu, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jan. 11, 2022, as Appl. No. 17/647,622.
Application 17/647,622 is a continuation of application No. PCT/CN2021/113577, filed on Aug. 19, 2021.
Claims priority of application No. 202110907578.5 (CN), filed on Aug. 9, 2021.
Prior Publication US 2023/0043941 A1, Feb. 9, 2023
Int. Cl. H10B 12/00 (2023.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01)
CPC H10B 12/482 (2023.02) [H01L 21/76897 (2013.01); H01L 23/5225 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor structure, wherein
the method comprises:
providing an initial structure, wherein the initial structure comprises a substrate and bit line structures arranged at intervals on the substrate;
forming an initial protective structure, wherein the initial protective structure is formed on a top surface of each of the bit line structures, sidewalls of each of the bit line structures and a surface of the substrate, the method further comprises:
removing the initial protective structure covering the surface of the substrate, and removing the initial protective structure on the top surface of each of the bit line structures, to retain the initial protective structure at least covers a part of sidewalls of each of the bit line structures, and the initial protective structure has a first height in a direction parallel to the bit line structures;
forming a shielding structure, wherein the shielding structure at least covers a part of sidewalls of the initial protective structure; and
removing at least a part of the initial protective structure exposed by the shielding structure by using the shielding structure as an etching selection layer, to form protective structures each having a second height.