US 12,232,309 B2
Capacitor and method for forming the same
Yu-Ping Hsiao, Taichung (TW); Cheol-Soo Park, Taichung (TW); Chun-Hung Cheng, Taichung (TW); Wei-Chieh Chuang, Taichung (TW); Wei-Chao Chou, Taichung (TW); and Yen-Min Juan, Taichung (TW)
Assigned to WINBOND ELECTRONICS CORP., Taichung (TW)
Filed by Winbond Electronics Corp., Taichung (TW)
Filed on Feb. 4, 2022, as Appl. No. 17/592,751.
Claims priority of application No. 110123116 (TW), filed on Jun. 24, 2021.
Prior Publication US 2022/0415891 A1, Dec. 29, 2022
Int. Cl. H10B 12/00 (2023.01); H01G 4/008 (2006.01); H01G 4/01 (2006.01)
CPC H10B 12/00 (2023.02) [H01G 4/0085 (2013.01); H01G 4/01 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for forming a capacitor, comprising:
providing a substrate;
sequentially forming a support layer and a template layer on the substrate;
forming cup-shaped openings in the template layer and the support layer;
forming a lower electrode material in the cup-shaped openings and on a top surface of the support layer;
removing the lower electrode material layer on the top surface of the support layer, and using the remaining lower electrode material layer as cup-shaped lower electrodes;
removing an upper portion of the support layer, so that sidewalls of the cup-shaped lower electrodes protrude from the top surface of the support layer;
forming an oxide layer on surfaces of the cup-shaped lower electrodes and a surface of the support layer;
annealing the oxide layer to form an annealed oxide layer;
forming a protective layer on the annealed oxide layer, wherein the protective layer closes tops of the cup-shaped openings;
forming a mask on top surfaces of a portion of the cup-shaped lower electrodes;
removing the protective layer and the support layer which are not covered by the mask;
removing the remaining protective layer, the template layer and a portion of the annealed oxide layer, so that the remaining annealed oxide layer is attached to inner surfaces of the cup-shaped lower electrodes;
forming a capacitor dielectric layer on the surfaces of the cup-shaped lower electrodes, on surfaces of the remaining annealed oxide layer and on surfaces of the support layer; and
forming an upper electrode on surfaces of the capacitor dielectric layer.