US 12,231,130 B2
Low power comparator
Hiroki Asano, Kanagawa (JP); and Kenji Tomiyoshi, Chiba (JP)
Assigned to Renesas Design (UK) Limited, Bourne End (GB)
Filed by Renesas Design (UK) Limited, Bourne End (GB)
Filed on Dec. 28, 2022, as Appl. No. 18/147,100.
Prior Publication US 2024/0223174 A1, Jul. 4, 2024
Int. Cl. G01R 19/165 (2006.01); G06F 1/28 (2006.01); H03F 3/45 (2006.01); H03K 5/24 (2006.01)
CPC H03K 5/2481 (2013.01) [G01R 19/16566 (2013.01); G06F 1/28 (2013.01); H03F 3/45071 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A comparator comprising:
an input port for receiving an input voltage;
an output port for providing an output voltage;
a resistive divider having a first node for providing a first voltage and a second node for providing a second voltage;
a first transistor having a control terminal coupled to the first node, a first terminal coupled to the input port, and a second terminal coupled to a common node;
a second transistor having a control terminal coupled to the second node, a first terminal coupled to the input port, and a second terminal coupled to the common node; and
a differential amplifier having a first input coupled to the first terminal of the first transistor, a second input coupled to the first terminal of the second transistor and an output coupled to the output port,
wherein the first transistor is coupled to the input port via a third transistor, and wherein the second transistor is coupled to the input port via a fourth transistor,
wherein the third transistor has a control terminal coupled to the first input of the differential amplifier, and wherein the fourth transistor has a control terminal coupled to the second input of the differential amplifier, and
wherein the first transistor is an anti-doped gate transistor in which the gate of the first transistor is doped with a doping type opposite to that of the first transistor type, and wherein the second transistor is a normal gate transistor in which the gate of the second transistor is doped with a same doping type as the second transistor type.