US 12,231,087 B2
Body tie optimization for stacked transistor amplifier
Simon Edward Willard, Irvine, CA (US); Chris Olson, Palatine, IL (US); and Tero Tapio Ranta, San Diego, CA (US)
Assigned to pSemi Corporation, San Diego, CA (US)
Filed by pSemi Corporation, San Diego, CA (US)
Filed on Mar. 10, 2023, as Appl. No. 18/182,047.
Application 18/182,047 is a continuation of application No. 17/021,878, filed on Sep. 15, 2020, granted, now 11,606,065.
Application 17/021,878 is a continuation of application No. 16/453,287, filed on Jun. 26, 2019, granted, now 10,784,818, issued on Sep. 22, 2020.
Application 16/453,287 is a continuation of application No. 15/839,648, filed on Dec. 12, 2017, granted, now 10,367,453, issued on Jul. 30, 2019.
Application 15/839,648 is a continuation of application No. 15/268,257, filed on Sep. 16, 2016, granted, now 9,882,531, issued on Jan. 30, 2018.
Prior Publication US 2023/0283237 A1, Sep. 7, 2023
Int. Cl. H03F 1/22 (2006.01); H01L 21/84 (2006.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 49/02 (2006.01); H03F 1/02 (2006.01); H03F 1/52 (2006.01); H03F 3/193 (2006.01); H03F 3/195 (2006.01); H03F 3/21 (2006.01)
CPC H03F 1/0205 (2013.01) [H01L 21/84 (2013.01); H01L 27/0688 (2013.01); H01L 27/1203 (2013.01); H01L 28/40 (2013.01); H01L 29/0847 (2013.01); H01L 29/1095 (2013.01); H03F 1/223 (2013.01); H03F 1/523 (2013.01); H03F 3/193 (2013.01); H03F 3/195 (2013.01); H03F 3/21 (2013.01); H03F 2200/108 (2013.01); H03F 2200/297 (2013.01); H03F 2200/42 (2013.01); H03F 2200/451 (2013.01); H03F 2200/48 (2013.01); H03F 2200/61 (2013.01); H03F 2200/75 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A circuit, comprising:
a transistor stack configured to operate as an amplifier, the transistor stack comprising an input transistor in series connection with at least one transistor, the input transistor configured to receive an input RF signal at a gate of the input transistor;
wherein the input transistor is a body tied transistor having a body that is coupled to a potential, and
wherein the at least one transistor is a floating transistor having a body that is not coupled to a potential.