US 12,231,042 B2
Isolation connections for high-voltage power stage
John Pigott, Phoenix, AZ (US); and Trevor Mark Newlin, Mesa, AZ (US)
Assigned to NXP USA, Inc., Austin, TX (US)
Filed by NXP USA, Inc., Austin, TX (US)
Filed on May 2, 2022, as Appl. No. 17/734,993.
Prior Publication US 2023/0353050 A1, Nov. 2, 2023
Int. Cl. H02M 3/158 (2006.01)
CPC H02M 3/158 (2013.01) 22 Claims
OG exemplary drawing
 
1. A power stage for a direct current (DC)-DC converter, the power stage comprising:
an input terminal coupled to receive an input DC voltage;
a high-side segment connected between the input terminal and an output terminal of the power stage; and
a low-side segment connected between the output terminal of the power stage and a ground on a substrate;
wherein at least one of the high-side segment and the low-side segment comprises a set of stacked transistors embedded in the substrate;
wherein each stacked transistor has a set of input and output terminals and a separate isolation terminal;
wherein each separate isolation terminal is coupled to a different circuit element within the power stage; and
wherein the isolation terminal for each stacked transistor is separated from the set of input and output terminals for each stacked transistor by a set of parasitic elements.