US 12,230,802 B2
Anodes for lithium-based energy storage devices, and methods for making same
John C. Brewer, Rochester, NY (US); Kevin Tanzil, Rochester, NY (US); Paul D. Garman, Pittsford, NY (US); and Robert G. Anstey, Tonawanda, NY (US)
Assigned to Graphenix Development, Inc., Williamsville, NY (US)
Filed by Graphenix Development, Inc., Williamsville, NY (US)
Filed on Apr. 12, 2023, as Appl. No. 18/299,226.
Application 18/299,226 is a division of application No. 16/991,623, filed on Aug. 12, 2020, granted, now 11,658,300.
Claims priority of provisional application 62/886,177, filed on Aug. 13, 2019.
Prior Publication US 2023/0268511 A1, Aug. 24, 2023
Int. Cl. H01M 4/62 (2006.01); H01G 11/26 (2013.01); H01G 11/46 (2013.01); H01G 11/68 (2013.01); H01M 4/02 (2006.01); H01M 4/04 (2006.01); H01M 4/133 (2010.01); H01M 4/134 (2010.01); H01M 4/136 (2010.01); H01M 4/38 (2006.01); H01M 4/485 (2010.01); H01M 4/525 (2010.01); H01M 4/58 (2010.01); H01M 4/64 (2006.01); H01M 4/66 (2006.01); H01M 10/0525 (2010.01)
CPC H01M 4/62 (2013.01) [H01G 11/26 (2013.01); H01G 11/46 (2013.01); H01G 11/68 (2013.01); H01M 4/0404 (2013.01); H01M 4/0428 (2013.01); H01M 4/0452 (2013.01); H01M 4/0471 (2013.01); H01M 4/133 (2013.01); H01M 4/134 (2013.01); H01M 4/136 (2013.01); H01M 4/382 (2013.01); H01M 4/386 (2013.01); H01M 4/485 (2013.01); H01M 4/525 (2013.01); H01M 4/58 (2013.01); H01M 4/64 (2013.01); H01M 4/661 (2013.01); H01M 4/664 (2013.01); H01M 10/0525 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01)] 21 Claims
OG exemplary drawing
 
1. An anode for an energy storage device comprising:
a current collector comprising a metal oxide layer;
a continuous porous lithium storage layer overlaying the metal oxide layer, wherein the continuous porous lithium storage layer has fewer than 1 nanostructure per 1600 square microns and comprises amorphous silicon deposited by a PECVD process; and
a first supplemental layer overlaying the continuous porous lithium storage layer, the first supplemental layer comprising silicon nitride, silicon dioxide, or silicon oxynitride.